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Figure 15-2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAI N MEMORY PAGE
TO BUFFER TRA N SFER
(53H, 55H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
BUFFER W RITE
( 8 4H, 8 7H)
MAI N MEMORY PAGE PROGRAM
THROUGH BUFFER
( 8 2H, 8 5H)
BUFFER TO MAI N
MEMORY PAGE PROGRAM
( 8 3H, 8 6H)
AUTO PAGE RE W RITE
(2)
(5 8 H, 59H)
I N CREME N T PAGE
(2)
ADDRESS POI N TER
E N D
Notes:
32
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase and program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
AT45DB321C
3387M–DFLASH–2/08
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